Q-Band (45 GHz) Microwave Integrated Circuit Power Amplifier Designs Submitted to TriQuint Semiconductor for Fabrication with 0.15-μm High-Electron-Mobility Transistors (HEMT) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

Report No. ARL-TN-0574
Authors: John E. Penn
Date/Pages: September 2013; 14 pages
Abstract: Compact hand-held satellite communications (SATCOM) systems are important for instant, secure data, and voice links in remote global regions. Small efficient electronic components are needed for these, often battery powered, communications systems, particularly the power amplifier (PA) circuit in the transmitter. Gallium nitride (GaN) integrated circuits enable improvements in power efficiencies, transmit powers, and higher bandwidths for state-of-the-art radio frequency (RF) electronics and devices. The U.S. Army Research Laboratory (ARL) has been working with TriQuint Semiconductor, Inc. (TQS) for fabrication under a recent cooperative research and development agreement (CRADA) between ARL and TQS to develop efficient high-power amplifiers for SATCOM applications. Several Q-band amplifier designs were submitted for fabrication in a TQS pre-released 0.15-¼m GaN on the 2-mil silicon carbide (SiC) process. This technical note gives a brief overview of the designs submitted for fabrication which that will be followed by a more thorough technical report on the design details of those PAs.
Distribution: Approved for public release
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Last Update / Reviewed: September 1, 2013