Optimization of Thick Negative Photoresist for Fabrication of Interdigitated Capacitor Structures

Report No. ARL-TR-7258
Authors: Erik Enriquez; D Shreiber; E Ngo; M Ivill; SG Hirsch; C Hubbard; MW Cole
Date/Pages: April 2015; 24 pages
Abstract: Investigations were conducted in the optimization of a lift-off photolithography technique using thick negative photoresist (PR) NR9-8000 to achieve and optimize micron-scale interdigitated capacitor (IDC) structures by lift-off process for use in high-frequency electrical characterization measurements. Target feature resolution was in the range of 320 ¼m, with PR thickness in the range of 620 ¼m. Systematic deviations were made from manufacturer-recommended PR processing conditions to investigate a processing-structure relationship for optimizing of IDC fabrication including PR response to manipulation of substrate material, spin-speed, postexposure bake, exposure dose, and development process conditions. Postexposure bake temperature was found to be the most sensitive and critical parameter for the optimization of PR structures.
Distribution: Approved for public release
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Last Update / Reviewed: April 1, 2015