Monolayer Molybdenum Disulfide Common-Source Amplifiers on Rigid and Flexible Substrates

Report No. ARL-TR-8742
Authors: Alex Mazzoni, Matthew Chin, Robert Burke, Katherine Price, Michael Valentin, and Sina Najmaei
Date/Pages: July 2019; 50 pages
Abstract: Using monolayer molybdenum disulfide as the transistor channel material, common-source n-type metal-oxide-semiconductor amplifier circuits are fabricated and tested. Two different load transistor configurations are investigated: a depletion-mode load transistor (gate and source tied together) and a diode-connected load transistor (drain and gate tied together). After transferring from the growth substrate via a potassium hydroxide wet etch process, devices are fabricated on a thermal oxide substrate and on a spin-on polyimide layer. The depletion-mode load transistor devices show a DC voltage gain up to –10 with a supply voltage of 4 V, with the device gain mainly determined by the doping level after the top-gate dielectric deposition. AC voltage gain for both load types is typically –1 to –2.5 at frequencies of 1 kHz to 10's of kilohertz. The AC performance is mainly limited by parasitic resistances and capacitances of the testing setup. Possible solutions to increase the device performance and considerations for future devices are discussed.
Distribution: Approved for public release
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Last Update / Reviewed: July 1, 2019