Growth and Characterization of Graphene/Bismuth Telluride Heterostructures

Report No. ARL-TR-8736
Authors: Travis M Tumlin, Lily Giri, Mark H Griep, and Shashi P Karna
Date/Pages: July 2019; 24 pages
Abstract: Graphene (G)-based van der Waals heterostructures have recently attracted substantial attention due to the degree of customization afforded with these systems along with the ability to overcome drawbacks associated with their single-layer counterparts. The integration of ultra-high-mobility graphene with other 2-D materials provides an excellent approach for harnessing graphene's extraordinary electronic properties while allowing for greater complexity and control in switching and energy-harvesting devices. The quality, design, and controlled fabrication of these heterostructures rely on a detailed understanding of the growth mechanisms and transfer techniques. Here we present assembly and characterization of bi- and trilayer G/Bi2Te3/G heterostructures via a combination of transfer and chemical vapor deposition growth techniques. The fabrication of bilayer G/Bi2Te3 was accomplished through epitaxial growth of bismuth telluride nanoplates directly on graphene. The graphene third layer was then deposited using a polymer-assisted transfer technique to create trilayer G/Bi2Te3/G sandwich structures. Electrical measurements of the assembled heterostructure demonstrated an increase in sheet resistance with the growth of Bi2Te3 on graphene. The sheet resistance further decreases with the addition of a top graphene layer below the value of pristine graphene monolayer, suggesting that Bi2Te3 plays an important role in the surface sensitive mobility of electrons across graphene.
Distribution: Approved for public release
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Last Update / Reviewed: July 1, 2019